Common Data : VDD = 1.8V , Lmin = 0.18µm, µ0N = 350cm2/V s, µ0P = 100cm2/V s, |VTH | = 0.55, tox = 3.8nm, λ = 0.07V−1, χ = 0.1.
Common Data : VDD = 1.8V , Lmin = 0.18µm, µ0N = 350cm2/V s, µ0P = 100cm2/V s, |VTH | = 0.55, tox = 3.8nm, λ = 0.07V−1, χ = 0.1.
1. Design a simple MOS current mirror of the type shown in Fig. 17 to meet the following constraints.
Figure 17: Figure for Question 1
Make and identical. You are to minimize the total device area within given constraints. The device area is the total gate area Assume
2. Design a voltage reference using the Beta-multiplier. Using spice simulation show the temperature performance of your design, by plotting reference voltage vs temperature.
3. Consider the circuit of Fig. 18 assuming and
Figure 18: Figure for Question 3
4. Consider the circuit of Fig. 19 with and
Figure 19: Figure for Question 4
5. Calculate the quiscent curent and temperature coefficient of the circuit shown in Fig.20 where and The resistor has a temperature coefficient of
Figure 20 : Figure for Question 5